unisonic technologies co., ltd 2sd1664 npn silicon transistor www.unisonic.com.tw 1 of 4 copyright ? 2009 unisonic technologies co., ltd qw-r208-025.c medium power npn transistor ? description the utc 2sd1664 is an epitaxial planar type npn silicon transistor. ? features * low v ce(sat) : v ce (sat) = 0.15v(typ.) (i c /i b = 500ma/50ma) * complement the 2sb1132. sot-89 1 lead-free: 2sd1664l halogen-free:2sd1664g ? ordering information ordering number pin assignment normal lead free plating halogen free package 1 2 3 packing 2SD1664-X-AB3-R 2sd1664l-x-ab3-r 2sd1664g-x-ab3-r sot-89 b c e tape reel
2sd1664 npn silicon transistor unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r208-025.c ? absolute maximum ratings ( ta=25c ) parameter symbol rating unit collector-base voltage v cbo 40 v collector-emitter voltage v ceo 32 v emitter-base voltage v ebo 5 v collector current dc 1 a collector current (duty=1/2, pw=20ms) pulse i c 2 a collector power dissipation p c 0.5 w junction temperature t j +150 c storage temperature t stg -55 ~ +150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical characteristics (ta=25c, unless otherwise specified) parameter symbol test conditions min typ max unit collector base breakdown voltage bv cbo i c = 50 a 40 v collector emitter breakdown voltage bv ceo i c = 1ma 32 v emitter base breakdown voltage bv ebo i e =50 a 5 v collector cut-off current i cbo v cb =20v 0.5 a emitter cut-off current i ebo v eb = 4v 0.5 a dc current gain h fe v ce = 3v, ic= 100ma 82 390 collector-emitter satu ration voltage v ce(sat) i c /i b =500ma /50ma 0.15 0.4 v transition frequency f t v ce =5v, i e =-50ma, f=100mhz 150 mhz output capacitance c ob v cb = 10v, i e = 0a, f=1mhz 15 pf ? classification of h fe rank p q r range 82-180 120-270 180-390
2sd1664 npn silicon transistor unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r208-025.c ? typical characteristics 0 0.2 500 1 base-emitter voltage, vbe(v) grounded emitter propagation characteristics collector current, i c (ma) 200 12 51020 200 50 collector current, i c (ma) dc current gain vs.collector current (i) dc current gain, h fe 100 0.4 0.6 0.8 1.6 1.4 1.2 1.0 2 5 10 vce =6v ta=100c ta=25c ta= 55c 0 500 0 collector-emitter voltage, vce(v) grounded emitter output characteristics collector current, i c (ma) 100 0.4 0.8 1.6 2.0 1.2 200 300 400 2.0ma ib =0ma ta=25c 2.5ma 1.5ma 1.0ma 0.5ma 3.0ma 3.5ma 4.0ma 4.5 ma 50 100 200 500 1000 500 1000 ta=25c vce= 3v vce= 1v 12 51020 200 50 collector current, i c (ma) dc current gain vs.collector current (ii) dc current gain, h fe 100 50 100 200 500 1000 500 1000 vce= 3v ta=100c ta=25c ta= -55c 12 5 1020 0.05 0.01 collector current, i c (ma) collector-emitter saturation voltage vs. collector current (i) collector saturation voltage, vce(sat) ( v) 0.02 50 100 200 500 1000 0.1 0.2 0.5 ta=25c ic/ib=10 20 50 100 2000 2000 ic/ib=50 ic/ib=20 12 5 1020 0.05 0.01 collector current, i c (ma) collector-emitter saturation voltage vs. collector current (ii) collector saturation voltage:vce(sat) ( v) 0.02 50 100 200 500 1000 0.1 0.2 0.5 ta=25c ta=100c ta=-40c i c / i b =10
2sd1664 npn silicon transistor unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r208-025.c ? typical characteristics(cont.) 0.1 0.2 0.5 1 2 0.05 0.01 collector-emitter voltage, vce(v) safe operation area collector curr ent, ic (a) 0.02 510 20 50 0.1 0.2 0.001 0.01 0.1 1 10 1 0.1 time, t(s) transient thermal resistance transient thermal resistance, r th (c/w) 100 100 1000 10 1000 -1 20 emitter current, i e (ma) gain bandwidth produc t vs. emitter current transition frequency, f t (mhz) 50 -2 -5 -20 -50 -10 100 200 -100 ta=25c v ce =5v 0.5 10 collector to base voltage, v cb (v) collector output capacitance vs.collector- base voltage collector output capacitance, c ob (pf) 20 12 1020 5 50 100 f=1mhz ta=25c i b =0a 0.5 1 2 5 p w = 1 0 0m s * p w = 1 0 m s * d c ta=25c *single pulse ta=25c 5 utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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